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| Advanced Technical Information IXKF 40N60SCD1 ID25 VDSS RDSon trr = 38 A = 600 V = 60 m = 70 ns CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PACTM MOSFET T Symbol VDSS VGS ID25 ID90 Symbol TC = 25C TC = 90C Conditions Conditions TVJ = 25C to 150C Maximum Ratings 600 20 38 25 V V A A Features * fast CoolMOS power MOSFET - 2nd generation - High blocking voltage - Low on resistance - Low thermal resistance due to reduced chip thickness * Series Schottky diode prevents current flow through MOSFET's body diode - very low forward voltage - fast switching * Ultra fast HiPerFREDTM anti parallel diode - low operating forward voltage - fast and soft reverse recovery - low switching losses * ISOPLUS i4-PACTM high voltage package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline Applications Converters with * circuit operation leading to current flow through switches in reverse direction - e. g. - phaseleg with inductive load - resonant circuits * high switching frequency Examples * switched mode power supplies (SMPS) * uninterruptable power supplies (UPS) * DC-DC converters * welding converters * converters for inductive heating * drive converters Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 60 3.5 0.5 70 m 5.5 V RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf RthJC RthJH VGS = 10 V; ID = ID90 VDS = 20 V; ID = 3 mA; VDS = VDSS; VGS = 0 V; TVJ = 25C TVJ = 125C VGS = 20 V; VDS = 0 V VGS= 10 V; VDS = 350 V; ID = 50 A 0.3 mA mA 100 nA 220 55 125 30 95 100 10 0.9 nC nC nC ns ns ns ns 0.45 K/W K/W VGS= 10 V; VDS = 380 V; ID = 25 A; RG = 1.8 with heat transfer paste CoolMOS is a trademark of IXYS reserves the right to change limits, test conditions and dimensions. Infineon Technologies AG. (c) 2002 IXYS All rights reserved 1-2 212 IXKF 40N60SCD1 Series Schottky Diode DS Symbol IF25 IF90 Conditions TC = 25C TC = 90C Maximum Ratings 60 40 A A Dimensions in mm (1 mm = 0.0394") Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 0.9 0.7 2.9 V V VF RthJC RthJH IF = 20 A; TVJ = 25C TVJ = 125C with heat transfer paste 2 K/W K/W Anti Parallel Diode DF Symbol IF25 IF90 Conditions TC = 25C TC = 90C Maximum Ratings 32 16 A A Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.1 1.4 15 70 2.6 2.5 V V A ns 1.3 K/W K/W VF IRM trr RthJC RthJH IF = 20 A; TVJ = 25C TVJ = 125C IF = 30 A; diF/dt = -500 A/s; TVJ = 125C VR = 600 V; VGE = 0 V with heat transfer paste Component Symbol VISOL TVJ Tstg FC mounting force with clip Conditions IISOL 1 mA; 50/60 Hz Maximum Ratings 2500 -40...+150 -40...+125 20 ... 120 V~ C C N Symbol Cp d S , dA d S , dA Weight Conditions coupling capacity between shorted pins and mounting tab in the case D pin - S pin pin - backside metal Characteristic Values min. typ. max. 40 7 5.5 9 pF mm mm g 212 (c) 2002 IXYS All rights reserved 2-2 |
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